Process monitoring of semiconductor thin films and interfaces by spectroellipsometry

Applied Surface Science

Volumn 154, Issue , 2000, Pages 283-290

  Brenot, R ^a   Drevillon B ^a   Bulkin, P ^a   Roca I Cabarrocas, P ^a   Vanderhaghen, R ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; CRYSTALLIZATION; INTERFACES (MATERIALS); OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILICON SOLAR CELLS; SURFACE ROUGHNESS;

BRUGGEMAN THEORY; SPECTROELLIPSOMETRY;

SEMICONDUCTING SILICON;

EID: 0343953435     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00501-2     Document Type: Article

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