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Volumn 12, Issue 8, 2000, Pages 954-956

InGaAsP microdisk lasers on AlxOy

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS;

EID: 0343878184     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.867972     Document Type: Article
Times cited : (23)

References (11)
  • 1
    • 0033123896 scopus 로고    scopus 로고
    • Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: Design, fabrication, lasing characteristics, and spontaneous emission factor
    • M. Fujita, A. Sakai, and T. Baba, "Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: Design, fabrication, lasing characteristics, and spontaneous emission factor," IEEE J. Select. Topics Quantum Elecron., vol. 5, pp. 673-681, 1999.
    • (1999) IEEE J. Select. Topics Quantum Elecron. , vol.5 , pp. 673-681
    • Fujita, M.1    Sakai, A.2    Baba, T.3
  • 4
    • 0031191349 scopus 로고    scopus 로고
    • Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 μm
    • T. Baba, M. Fujita, A. Sakai, M. Kihara, and R. Watanabe, "Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 μm," IEEE Photon. Technol. Lett., vol. 9, pp. 878-880, 1997.
    • (1997) IEEE Photon. Technol. Lett. , vol.9 , pp. 878-880
    • Baba, T.1    Fujita, M.2    Sakai, A.3    Kihara, M.4    Watanabe, R.5
  • 5
    • 0032202485 scopus 로고    scopus 로고
    • Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers
    • S. M. K. Thiyagarajan, A. F. J. Levi, C. K. Lin, I. Kim, P. D. Dapkus, and S. J. Pearton, "Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers," IEEE Electron. Lett., vol. 34, pp. 2333-2334, 1998.
    • (1998) IEEE Electron. Lett. , vol.34 , pp. 2333-2334
    • Thiyagarajan, S.M.K.1    Levi, A.F.J.2    Lin, C.K.3    Kim, I.4    Dapkus, P.D.5    Pearton, S.J.6
  • 8
    • 85046528331 scopus 로고    scopus 로고
    • Room-temperature triangular-lattice two-dimensional photonic bandgap lasers operating at 1.54 μm
    • to be published
    • J. K. Hwang, H. Y. Ryu, D. S. Song, I. Y. Han, H. W. Song, H. K. Park, and Y. H. Lee, "Room-temperature triangular-lattice two-dimensional photonic bandgap lasers operating at 1.54 μm," Appl. Phys. Lett., to be published.
    • Appl. Phys. Lett.
    • Hwang, J.K.1    Ryu, H.Y.2    Song, D.S.3    Han, I.Y.4    Song, H.W.5    Park, H.K.6    Lee, Y.H.7
  • 9
    • 36449008883 scopus 로고
    • Deep-oxide planar buried-channel AlGaAs-GaAs quantum well heterostructure wavequides with low bend loss
    • M. R. Krames, E. I. Chen, A. C. Crook, T. A. DeTample, P. A. Basse, and N. Holonyak Jr., "Deep-oxide planar buried-channel AlGaAs-GaAs quantum well heterostructure wavequides with low bend loss," Appl. Phys. Lett., vol. 65, pp. 1912-1914, 1995.
    • (1995) Appl. Phys. Lett. , vol.65 , pp. 1912-1914
    • Krames, M.R.1    Chen, E.I.2    Crook, A.C.3    DeTample, T.A.4    Basse, P.A.5    Holonyak N., Jr.6
  • 10
    • 0032484769 scopus 로고    scopus 로고
    • Room temperature continuous wave lasing characteristics of GaInAsP/InP microdisk injection laser
    • M. Fujita, K. Inoshita, and T. Baba, "Room temperature continuous wave lasing characteristics of GaInAsP/InP microdisk injection laser," IEEE Electron. Lett., vol. 34, pp. 278-279, 1998.
    • (1998) IEEE Electron. Lett. , vol.34 , pp. 278-279
    • Fujita, M.1    Inoshita, K.2    Baba, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.