Room temperature continuous wave lasing characteristics of GaInAsP/InP microdisk injection laser

Electronics Letters

Volumn 34, Issue 3, 1998, Pages 278-279

  Fujita, M ^a   Inoshita, K ^a   Baba, T ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; LASER MODES; OPTICAL WAVEGUIDES; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

MICRODISK INJECTION LASER; REACTIVE ION BEAM ETCHING (RIBE);

INJECTION LASERS;

EID: 0032484769     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980109     Document Type: Article

References (3)

1. BABA, T.: 'Photonic crystals and microdisk cavities based on GaInAsP-InP system', IEEE J. Sel. Topics Quantum Electron., 1997, 3, (3), pp. 808-830
2. LEVI, A.F.J., SLUSHER, R.E., MCCALL, S.L., TANBUN-EK, T., COBLENTZ, D.L., and PEARTON, S.J.: 'Room temperature operation of microdisk lasers with submilliamp threshold current', Electron. Lett., 1992, 28, (11), pp. 1010-1012
3. BABA, T., FUJITA, M., SAKAI, A., KIHARA, M., and WATANABE, R.: 'Lasing characteristics of GaInAsP/InP strained quantum-well microdisk injection lasers with diameter of 2-10μm', IEEE Photonics Technol. Lett., 1997, 9, (7), pp. 878-880