6H-SiC P-N structures with predominate exciton electroluminescence, obtained by sublimation epitaxy

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 275-277

  Lebedev, A A ^a   Do Carmo, M C ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

6H SiC diodes; Electroluminescence; Uniaxial pressure

Indexed keywords

ELECTROLUMINESCENCE; EXCITONS; SILICON CARBIDE; STRESSES; SUBLIMATION;

SUBLIMATION EPITAXY;

SEMICONDUCTOR DIODES;

EID: 0009314138     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00004-4     Document Type: Article

References (10)

1. M. Ikeda et al., J. Appl. Phys., 50 (1979) 8215.
2. W. von Munch and W. Kukzinder, Solid State Electron, 21 (1978) 1129.
3. V.A. Dmitriev, P.A. Ivanov and Ya. V. Morozenko et al., Sov. Tech. Phys. Lett., 11, N4 (1985) 246-248.
4. J.A. Edmond, H.-S. Kong and C.H. Carter Jr., Physica B, 185 (1993) 453-460.
5. M.M. Anikin, A.A. Lebedev, S.N. Pyatko, A.M. Strel'chuk and A.L. Syrkin, Mater. Sci. Eng., BV11 (1992) 113-115.
6. M.M. Anikin, P.A. Ivanov, A.A. Lebedev, S.N. Pyatko and A.M. Strel'chuk, in Z.C. Feng (ed.), Semiconductor Interfaces and Microstructures, World Scientific, Singapore, 1990, pp 280-311.
7. M.M. Anikin, N.I. Kuznetsov, A.A. Lebedev, A.M. Strel'chuk and A.L. Syrkin, Sov. Phys. Semicond., 24 (1990) 869-872.
8. A.A. Lebedev and V.E. Chelnokov, Diamond Related Mater., 3 (1994) 1393-1397.
9. M.M. Anikin, N.I. Kuznetsov, A.A. Lebedev, N.K. Poletaev, A.M. Strel'chuk, A.L. Syrkin and V.E. Chelnokov, Semiconductors, 28 (1994) 270-273.
10. M.M. Anikin, A.S. Zubrilov, A.A. Lebedev, A.M. Strel'chuk and A.E. Cherenkov, Sov. Phys. Semicond., V25, N3 (1991) 289-293.