In-situ contactless characterization of microscopic and macroscopic properties of Si-doped MBE-grown (2×4) GaAs surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1626-1630

  Hashizume, Tamotsu ^a   Ishikawa, Yasuhiko ^a   Yoshida, Toshiyuki ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Contactless C V; Fermi level pinning; GaAs; Kink; MBE; PL; Surface state; XPS

Indexed keywords

EID: 0343781204     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1626     Document Type: Article

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