Field emission mechanism from undoped chemical vapor deposition diamond films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 2, 2000, Pages 1031-1034

  Gohl A ^a   Gunther B ^a   Habermann, T ^a   Muller G ^a   Schreck, M ^b   Thurer K H ^b   Stritzker, B ^b  

^a UNIVERSITY OF WUPPERTAL   (Germany)

^b UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIAMOND FILMS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; EPITAXIAL GROWTH; SILICON; SUBSTRATES;

COULOMB POTENTIALS; POOLE-FRENKEL CONDUCTION PROCESS;

FIELD EMISSION CATHODES;

EID: 0343777460     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591321     Document Type: Article

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