Nucleation and growth of heteroepitaxial diamond films on silicon

Physica Status Solidi (A) Applied Research

Volumn 154, Issue 1, 1996, Pages 197-217

  Schreck, M ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DEPOSITION; FILM GROWTH; IONS; NUCLEATION; OPTICAL VARIABLES MEASUREMENT; REACTION KINETICS; SEMICONDUCTING SILICON; SEMICONDUCTOR PLASMAS; SUBSTRATES; SURFACES; X RAY SPECTROSCOPY;

FILM QUALITY; FILM THICKNESS; HETEROEPITAXIAL DEPOSITION; HETEROEPITAXIAL DIAMOND FILMS; X RAY POLE FIGURE MEASUREMENTS;

DIAMOND FILMS;

EID: 0030107845     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211540116     Document Type: Article

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