Comparison of different analytical techniques in measuring the surface region of ultrashallow doping profiles

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 336-340

  Felch, S B ^a   Chapek, D L ^b   Malik, S M ^b   Maillot, P ^c   Ishida, E ^c   Magee, C W ^d  

^a VARIAN MEDICAL SYSTEMS   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

^c SEMATECH   (United States)

^d Evans East Incorporated   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343700720     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588471     Document Type: Review

References (6)

1. The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, 1994), p. 120.
2. T. Sheng, S. B. Felch, and C. B. Cooper III, J. Vac. Sci. Technol. B 12, 969 (1994).
3. J. L. Hunter, S. F. Corcoran, D. P. Griffis, and C. M. Osburn, J. Vac. Sci. Technol. A 8, 2323 (1990).
4. A. B. Emerson, Y. Ma, M. L. Wise, M. L. Green, and S. W. Downey, J. Vac. Sci. Technol. B 14, 301 (1996).
5. E. Ishida, S. B. Felch, D. L. Chapek and J. Martens, J. Vac. Sci. Technol. B 14, 397 (1996).
6. R. B. Fair, in Impurity Doping Processes in Silicon, edited by F. F. Y. Wang (North-Holland, Amsterdam, 1981), p. 320.