On the impact of microstructure on luminescence of InGaN/GaN multi quantum wells grown by molecular beam epitaxy

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 291-295

  Bottcher T ^a   Einfeldt, S ^a   Figge, S ^a   Kirchner, V ^a   Heinke, H ^a   Hommel, D ^a   Rudloff, D ^b   Riemann, T ^b   Christen, J ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LUMINESCENCE OF SOLIDS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

DEFECT DENSITY; SURFACE FLATNESS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0343462257     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<291::AID-PSSA291>3.0.CO;2-M     Document Type: Article

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