In situ STM characterisation of Ga+ focused ion beam interactions with MBE grown GaAs(1 0 0)

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 346-351

  Brown, S J ^a   Rose, P D ^a   Linfield, E H ^a   Ritchie, D A ^a   Drouot, V ^a   Jones, G A C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Electron traps; Focused ion beam; GaAs; Ion beam implantation; Molecular beam epitaxy; Scanning tunnelling microscopy; Scanning tunnelling spectroscopy

Indexed keywords

ELECTRON ABSORPTION; ENERGY GAP; ION BEAM LITHOGRAPHY; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SPUTTERING;

ELECTRON TRAPPING; SURFACE RECONSTRUCTION; ULTRA-HIGH VACUUM SCANNING TUNNELING MICROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031146594     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01185-2     Document Type: Article

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