Formation of narrow channels using split back-gates defined by in situ focused ion beam lithography

Semiconductor Science and Technology

Volumn 12, Issue 1, 1997, Pages 137-139

  Iredale, N ^a   Linfield, E H ^a   Rose, P D ^a   Ritchie, D A ^a   Pepper, M ^a   Jones, G A C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SCATTERING; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; ION BEAM LITHOGRAPHY; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY;

SCHOTTKY GATES; SPLIT BACK GATES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030677774     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/1/001     Document Type: Article

References (11)