Improvement in the crystal quality of ZnSe films on Si(111) substrates with a nitrogen surface treatment

Thin Solid Films

Volumn 373, Issue 1-2, 2000, Pages 33-36

  Mendez Garcia V H ^a   Perez Centeno A ^a   Lopez Lopez M ^a   Tamura, M ^a   Momose, K ^b   Ojima, K ^b   Yonezu, H ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE RECONSTRUCTION; ZINC SELENIDE;

SEMICONDUCTING FILMS;

EID: 0343408415     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01086-5     Document Type: Article

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