SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 41, Issue 1, 1997, Pages 7-10

ZnSe/Si visible-sensitivity emitter bipolar transistors

(1) Lour, Wen Shiung a

a NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; GAIN MEASUREMENT; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; VAPOR PHASE EPITAXY; VLSI CIRCUITS;

ELECTRON INJECTION EFFICIENCY; EMITTER CURRENT GAIN; VALENCE BAND DISCONTINUITY; VISIBLE SENSITIVITY EMITTER BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030780337 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(96)00135-9 Document Type: Article

Times cited : (8)

References (12)

1
- 0017450147
- M. Yamaguchi, A. Yamamoto and M. Kondo, J. Appl. Phys. 48, 196 (1977).
- (1977) J. Appl. Phys. , vol.48 , pp. 196
- Yamaguchi, M.¹ Yamamoto, A.² Kondo, M.³

2
- 0001675405
- H. E. Ruda, J. Appl. Phys. 59, 1220 (1986).
- (1986) J. Appl. Phys. , vol.59 , pp. 1220
- Ruda, H.E.¹

3
- 0024605986
- H. Chang, J. M. Depuydt, J. E. Potts and M. A. Haase, J. Crystal Growth 95, 512 (1989).
- (1989) J. Crystal Growth , vol.95 , pp. 512
- Chang, H.¹ Depuydt, J.M.² Potts, J.E.³ Haase, M.A.⁴

4
- 0001052801
- J. I. Nishizawa, K. Itoh, Y. Okuno and F. Sakurai, J. Appl. Phys. 57, 2210 (1985).
- (1985) J. Appl. Phys. , vol.57 , pp. 2210
- Nishizawa, J.I.¹ Itoh, K.² Okuno, Y.³ Sakurai, F.⁴

5
- 0026953299
- Z. Yu, J. Ren, B. Sneed, K. Bowers, J. W. Cook Jr and J. F. Schetzina, IEEE Trans. Electron Devices 39, 2653 (1992).
- (1992) IEEE Trans. Electron Devices , vol.39 , pp. 2653
- Yu, Z.¹ Ren, J.² Sneed, B.³ Bowers, K.⁴ Cook J.W., Jr.⁵ Schetzina, J.F.⁶

6
- 0027909745
- N. Nakayama, S. Itoh, T. Ohata, K. Nakano, H. Okuyama, M. Ozawa, A. Ishibashi, M. Ikeda and Y. Mori, Electron. Lett. 29, 1488 (1993).
- (1993) Electron. Lett. , vol.29 , pp. 1488
- Nakayama, N.¹ Itoh, S.² Ohata, T.³ Nakano, K.⁴ Okuyama, H.⁵ Ozawa, M.⁶ Ishibashi, A.⁷ Ikeda, M.⁸ Mori, Y.⁹

7
- 0020138967
- T. Chikamura, S. Fujiwara, T. Shibata, Y. Miyata, Y. Terui, T. Wada, Y. Ohta and M. Fukai, IEEE Trans. Electron Devices 29, 999 (1982).
- (1982) IEEE Trans. Electron Devices , vol.29 , pp. 999
- Chikamura, T.¹ Fujiwara, S.² Shibata, T.³ Miyata, Y.⁴ Terui, Y.⁵ Wada, T.⁶ Ohta, Y.⁷ Fukai, M.⁸

8
- 0026207048
- Y. Guan, C. A. Zmudzinski, P. S. Zory and R. M. Park, IEEE Photonics Lett. 3, 685 (1991).
- (1991) IEEE Photonics Lett. , vol.3 , pp. 685
- Guan, Y.¹ Zmudzinski, C.A.² Zory, P.S.³ Park, R.M.⁴

9
- 0027698283
- M. Onomura, M. Ishikawa, Y. Nishidawa, S. Saito, P. J. Parbrook, K. Nitta, J. Renie and G. Hatakoshi, Electron. Lett. 29, 2114 (1993).
- (1993) Electron. Lett. , vol.29 , pp. 2114
- Onomura, M.¹ Ishikawa, M.² Nishidawa, Y.³ Saito, S.⁴ Parbrook, P.J.⁵ Nitta, K.⁶ Renie, J.⁷ Hatakoshi, G.⁸

10
- 0000337254
- W. R. Frensley and H. Kroemer, Phys. Rev. B 16, 2642 (1977).
- (1977) Phys. Rev. B , vol.16 , pp. 2642
- Frensley, W.R.¹ Kroemer, H.²

11
- 0021466377
- H. Kroemer, J. Vac. Sci. Technol. B2, 433 (1984).
- (1984) J. Vac. Sci. Technol. , vol.B2 , pp. 433
- Kroemer, H.¹

12
- 0023961137
- D. Walsh, K. Maxuruk, M. Benzaquen and P. Weissfloch, Semicond. Sci. Technol. 3, 116 (1988).
- (1988) Semicond. Sci. Technol. , vol.3 , pp. 116
- Walsh, D.¹ Maxuruk, K.² Benzaquen, M.³ Weissfloch, P.⁴

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