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Journal of Crystal Growth

Volumn 218, Issue 2, 2000, Pages 287-293

Growth and recrystallization of CeO2 thin films deposited on R-plane sapphire by off-axis RF sputtering

(8) Spankova M a Vavra I a Gazi S a Machajdik D a Chromik, S a Frohlich K a Hellemans, L b Benacka S a

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

b UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLIZATION; EPITAXIAL GROWTH; GRAIN SIZE AND SHAPE; MORPHOLOGY; SAPPHIRE; SPUTTER DEPOSITION; SURFACE ROUGHNESS; THERMAL EFFECTS; THIN FILMS;

BUFFER LAYERS; CERIA;

CERIUM COMPOUNDS;

EID: 0343390511 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00585-6 Document Type: Article

Times cited : (44)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.