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Volumn 82, Issue 9, 1997, Pages 4611-4615

A low temperature gate oxide process for n-channel SiGe modulation doped field effect transistors

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[No Author keywords available]

Indexed keywords

EID: 0343381302 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.366198 Document Type: Article

Times cited : (4)

References (14)

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