Growth of carbon nanotubes by chemical vapor deposition

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 1235-1240

  Jung, Minjae ^a   Yong Eun, Kwang ^b   Lee, Jae Kap ^b   Baik, Young Joon ^b   Lee, Kwang Ryeol ^b   Wan Park, Jong ^a  

^a Hanyang University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Aligned MWNT; Carbon nanotube; CVD; Deposition behavior

Indexed keywords

CATALYSTS; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; DEPOSITION; ENCAPSULATION; GRAIN GROWTH; NICKEL;

THERMAL CHEMICAL VAPOR DEPOSITION METHOD;

NANOTUBES;

CARBON;

EID: 0343337281     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00446-5     Document Type: Article

References (22)

1. Iijima S. Nature. 354:1991;56.
2. Saito Y. New Diamond Frontier Carbon Technol. 9:1999;1.
3. Thess A., Lee R., Smalley R.E. Science. 273:1996;483.
4. Cheng H.M., Li F., Pan H.Y., Dresselhaus M.S. Appl. Phys. Lett. 72:1998;3282.
5. Ren Z.F., Huang Z.P., Provencio P.N. Science. 282:1998;1105.
6. Lee C.J., Kim D.W., Lee Y.H., Kim J.M. Chem. Phys. Lett. 312:1999;461.
7. Pan Z.W., Xie S.S., Zhou W.Y., Wang G. Chem. Phys. Lett. 299:1999;97.
8. Wong E.W., Sheehan P.E., Liebert C.M. Science. 277:1997;1971.
9. Ugarte D., de Heer W.A. Science. 274:1996;1897.
10. de Heer W.A., Ugarte D. Science. 270:1995;1179.
11. Chen Y., Shaw D.T., Guo L. Appl. Phys. Lett. 76:2000;2469.
12. Choi W.B., Chung D.S., Lee Y.H., Kim J.M. Appl. Phys. Lett. 75:1999;3129.
13. Tracz E., Scholz R., Borowiecki T. Appl. Catal. 66:1990;133.
14. Baker R.T.K. Carbon. 27:1989;315.
15. Bianchini E.C., Lund C.R.F. J. Catal. 117:1989;455.
16. Snoeck J.W., Froment G.F., Fowles M. J. Catal. 169:1997;240.
17. Endo M., Shikata M. Ohyo Butsuri (in Japanese). 54:1985;507.
18. Jablonski G.A., Sacco A. Jr. Carbon. 30:1992;87.
19. Benito A.M., Martinez M.T. Carbon. 36:1998;681.
20. Bartholomew C.H. Catal. Rev.-Sci. Eng. 24:1982;67.
21. Rostrup-Nielsen J.R. J. Catal. 33:1974;184.
22. Lee C.J., Park J.H., Park J. Chem. Phys. Lett. 323:2000;560.