In-situ measurements of excimer laser irradiated zinc sulphide films on silicon

Applied Surface Science

Volumn 138-139, Issue 1-4, 1999, Pages 240-243

  Sands, David ^a   Key, Philip ^a   Hoyland, James ^a  

^a UNIVERSITY OF HULL   (United Kingdom)

Author keywords

Laser ablation; Reflectivity; Thin films; Transfer matrix; Zinc sulphide

Indexed keywords

EID: 0343268182     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00596-0     Document Type: Article

References (8)

1. F.X. Wagner, PhD thesis, Excimer laser processing of II-VI compound semiconductors, University of Hull, 1997.
2. W.M. Cranton, P.H. Key, D. Sands, C.B. Thomas, F.X. Wagner, XeCl laser ablation of ZnS, Appl. Surf. Sci. 96-98 (1996) 501-504.
3. D. Sands, F.X. Wagner, P.H. Key, Evidence for a thermal mechanism in excimer laser ablation of ZnS, Submitted to J. Appl. Phys.
4. M.K. El-Adawi, M.A. Abdel-Naby, S.A. Shalaby, Int. J. Heat Mass Transfer 38 (5) (1995) 947-952.
5. E. Toussaere, J. Zyss, Thin Solid Films 234 (1993) 432-438.
6. E.D. Palik, Handbook of Optical Constants, Academic Press, 1985.
7. H.H. Li, J. Phys. Chem. Ref. Data 13 (1) (1984) 103-150.
8. J.D. Hoyland, MSc thesis, In-situ time resolved reflectivity of laser irradiated ZnS thin films on Si, University of Hull, 1998.