XeCl laser ablation of thin film ZnS

Applied Surface Science

Volumn 96-98, Issue , 1996, Pages 501-504

  Cranton, W M ^b   Key, P H ^a   Sands, D ^a   Thomas, C B ^b   Wagner, F X ^a  

^a UNIVERSITY OF HULL   (United Kingdom)

^b UNIVERSITY OF BRADFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; GAS LASERS; LASER BEAM EFFECTS; LIGHT INTERFERENCE; MAGNETRON SPUTTERING; SILICON WAFERS; SUBSTRATES; THERMAL CONDUCTIVITY; THERMODYNAMIC PROPERTIES; THIN FILMS; XENON; ZINC SULFIDE;

IN SITU POST DEPOSITION ANNEALING; LASER FLUENCE; THERMAL REMOVAL; XENON CHLORIDE LASER ABLATION;

LASER ABLATION;

EID: 0030563003     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00503-X     Document Type: Article

References (6)

1. P.H. Key, D. Sands and F.X. Wagner, in: Proc. 1st Int. Symp. on Semiconductor Processing and Characterisation with Lasers, Ed. M. Brieger (Trans. Tech., Zurich, 1995); Mater. Sci. Forum 173/174 (1995) 59.
2. P.H. Key, D. Sands and F.X. Wagner, in: Proc. 1st Int. Symp. on Semiconductor Processing and Characterisation with Lasers, Ed. M. Brieger (Trans. Tech., Zurich, 1995); Mater. Sci. Forum 173/174 (1995) 59.
3. C.L. Enloe, R.H. Gilgenbach and J.S. Meacham, Rev. Sci. Instr. 58 (1987) 1597.
4. For Si see: M.N. Wybourne, EMIS Datareview, pp. 37-46; for ZnS see: Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology, Vol. 2. (Springer, Berlin, 1966).
5. For Si see: M.N. Wybourne, EMIS Datareview, pp. 37-46; for ZnS see: Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology, Vol. 2. (Springer, Berlin, 1966).
6. J.M. Poate and J.W. Mayer, Eds., Laser Annealing in Semiconductors (Academic Press, London, 1982).