Reducing MOSFET 1/f noise and power consumption by "switched biasing"

European Solid-State Circuits Conference

Volumn , Issue , 1999, Pages 154-157

  Gierkink, Sander L J ^a   Klumperink, Eric A M ^a   Van Tuijl, Ed ^a,b   Nauta, Bram ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; CIRCUIT OPERATION; CIRCUIT TECHNIQUES; MOS-FET; PHYSICAL EFFECTS; STRONG INVERSION; SWITCHED BIASING; TIME INTERVAL;

OSCILLATORS (ELECTRONIC);

EID: 0343213591     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. I. Bloom, Y. Nemirovsky, "lif Noise Reduction of Metal-Oxide-Semiconductor Transistors by cycling from inversion to accumulation", Applied Physics Letters, Vol. 58 (1 5), pp. 1664-1666, 15 April 199 1
3. B. Dierickx, E. Simoen, "The Decrease of "Random Telegraph Signal" Noise in Metal-Oxide-Semiconductor Field-Effect Transistors when cycled from inversion to accumulation", Journal of Applied Physics, Vol. 71 (4), 2028-2029, 15 February 1992.
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7. M. S. Keshner, "l/f Noise", Proceedings ofthe IEEE, Vol. 70, No. 3, pp. 212-218, March 1982.
8. A.A. Abidi and R.G. Meyer, "Noise in Relaxation Oscillators", IEEE Journal ofSolid-State Circuits, vol. 18, No. 6, 794-802, December 1983.