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Applied Physics Letters

Volumn 58, Issue 15, 1991, Pages 1664-1666

1/ f noise reduction of metal-oxide-semiconductor transistors by cycling from inversion to accumulation

(2) Bloom, I a Nemirovsky, Y a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34250803723 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.105130 Document Type: Article

Times cited : (109)

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- Fleetwood, D.M.¹ Scofield, J.H.²

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- (1983) Noise in Electronic Devices and Surfaces
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.