Nanoprocesses of the formation of reaction layers in Si-C-O systems

Crystal Research and Technology

Volumn 35, Issue 6, 2000, Pages 663-674

  Hähnel, Angelika ^a   Pippel, Eckhard ^a   Woltersdorf, Jörg ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOROSILICATE GLASS; CRYSTAL MICROSTRUCTURE; HEAT TREATMENT; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OXIDATION; REACTION KINETICS; SILICON CARBIDE; SINGLE CRYSTALS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

NANOCHEMISTRY; NANOMETRIC RESOLUTION; SILICON OXYCARBIDE;

SANDWICH STRUCTURES;

EID: 0343006782     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200007)35:6/7<663::AID-CRAT663>3.0.CO;2-J     Document Type: Article

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