Study of the thermal drift of the offset voltage of silicon pressure sensor

Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

Volumn 2, Issue , 1999, Pages 1051-1054

  Boukabache, A ^a   Blasquez, G ^b   Pons, P ^b   Dibi, Z ^c  

^a Universite Mentouri Constantine   (Algeria)

^b LAAS CNRS   (France)

^c UNIVERSITY OF BATNA   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

BRIDGE CIRCUITS; MICROELECTRONICS; PRESSURE SENSORS; SILICON;

ELECTRICAL RESPONSE; HIGH GAUGE FACTORS; MICROELECTRONIC TECHNIQUES; PIEZORESISTIVE EFFECTS; SILICON PRESSURE SENSORS; THEORETICAL APPROACH; THERMAL BEHAVIOURS; THERMAL COEFFICIENTS;

MONOCRYSTALLINE SILICON;

EID: 0342934330     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICECS.1999.813414     Document Type: Conference Paper

References (3)

1. B.DIEM, P.REY, S.RENARD, S.VIOLLET BOSSON, H.BONO, F.MICHEL, M.T.DELAY, G.DELAPIERRE, SOFSIMOX' : from bulk to surface micromachining, a new age for Silicon sensors and actuators, Sensors and Actuators A46-47 (1995), 8-16
2. V.STANKEVIC, C.SIMKAVICIUS, Application of Aluminium films as temperature sensors for the compensation of output thermal shift of Silicon piezoresistive pressure sensors, Sensors and Actuators A71 (1998), 161-166
3. Y.SUN, X.SUN, B.SUN, Q.MENG, Electric drift of the bridge offset for pressure sensors and its utilization, Sensors and Actuators A58 (1997), 249-256