Electric drift of the bridge offset for pressure sensors and its utilization

Sensors and Actuators, A: Physical

Volumn 58, Issue 3, 1997, Pages 249-257

  Sun, Yicai ^a,c   Sun, Xinyu ^a   Sun, Bing ^b,d   Meng, Qianhou ^a  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b Tianjin Institute of Metrological Supervision and Testing   (China)

^c SHANGHAI JIAO TONG UNIVERSITY   (China)

^d Metrology Institute of China   (China)

Author keywords

Compensation of offset thermal drift; Electric drift; Electric non linearity; Pressure sensors

Indexed keywords

COMPOSITION EFFECTS; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ION IMPLANTATION; PIEZOELECTRIC MATERIALS; RESISTORS; THERMAL EFFECTS;

ELECTRIC DRIFT;

PRESSURE GAGES;

EID: 0031081870     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0924-4247(97)01399-x     Document Type: Article

References (7)

1. S. Shirouzu et al., Offset temperature drift of silicon pressure sensor, Proc. 2nd Sensor Symp., Tsukuba, Japan, 1982, pp. 157-161.
2. T. Nishimoto et al., Temperature compensated piezoresistor fabricated by high energy ion implantation, IEICE Trans. Electron Devices, E78-C (1995) 152-156.
3. O.N. Tufte and E.L. Stelzer, Piezoresistive properties of silicon diffused layers, J. Appl. Phys., 34 (1963) 313-318.
4. S. Kim and K.D. Wise, Temperature sensitivity in silicon piezoresistive pressure transducers, IEEE Trans. Electron Devices, ED-30 (1983) 802-810.
5. M. Akbar and M. Shanblatt, Temperature compensation of piezo-resistive pressure sensors, Sensors and Actuators A, 33 (1992) 155-162.
6. K. Lee and K.D. Wise, A simulation program for solid-state pressure sensors, IEEE Trans. Electron Devices, ED-29 (1982) 34-41.
7. Measuring resistivity of silicon slices with a collinear four-probe array, 1971 Annual Book of ASTM Standards (Part8), F84-70, 1971, pp.697-711.