Monte Carlo simulation of the EBIC grain boundary contrast in semiconductors

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 181-184

  Tabet, N ^a   Ledra, M ^b  

^a KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS   (Saudi Arabia)

^b UNIVERSITY OF BISKRA   (Algeria)

Author keywords

Electron beam induced current; Grain boundaries; Semiconductors

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; ELECTRON BEAMS; INDUCED CURRENTS; MONTE CARLO METHODS; SEMICONDUCTOR MATERIALS;

ELECTRON BEAM INDUCED CURRENT (EBIC); RECOMBINATION CONTRAST;

GRAIN BOUNDARIES;

EID: 0030397219     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01703-5     Document Type: Article

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