Sample Preparation of InGaAsP/InP-Based Lasers for Plan-View Transmission Electron Microscopy Using Selective Chemical Thinning

Journal of the Electrochemical Society

Volumn 146, Issue 2, 1999, Pages 758-760

  Kallstenius, Thomas ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM GALLIUM ARSENIDE PHOSPHIDE; SELECTIVE CHEMICAL THINNING;

SEMICONDUCTOR LASERS;

EID: 0033076413     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391677     Document Type: Article

References (4)

1. S. N. G. Chu and T. T. Sheng, J. Electrochem. Soc., 131, 2663 (1984).
2. U. Ueda, Reliability and Degradation of III-V Optical Devices, Artech House, Inc., Norwood, MA, Boston, London (1996).
3. L. Lundgren and B. Stoltz, Inernal Reports, Ericsson Components (1996).
4. S. Adachi, Y Noguchi, and H. Kawaguchi, J. Electrochem. Soc., 129, 1053 (1982)