Unique source for scandium oxide layer deposition on tungsten for surface study of high electron emissivity

Surface and Interface Analysis

Volumn 27, Issue 11, 1999, Pages 981-983

  Kawano, Takashi ^a   Saito, Tsunenari ^b   Takai, Yoshizo ^a   Shimizu, Ryuichi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CATHODES; DEPOSITION; EVAPORATORS; STOICHIOMETRY; TUNGSTEN;

SCANDIUM OXIDE;

SCANDIUM COMPOUNDS;

EID: 0033321834     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199911)27:11<981::AID-SIA662>3.0.CO;2-1     Document Type: Article

References (6)

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3. Saito M, Suzuki R, Fukuyama K, Watanabe K, Sano K, Nakanishi H. IEEE Trans. Electron Devices 1990; 37: 2605.
4. Goto K, Koshikawa T, Ishikawa K, Shimizu R. J. Vac. Sci. Technol. 1978; 15: 1695.
5. Beag YW, Egawa K, Shimizu R. Rev. Sci. Instrum. 1993; 64: 3647.
6. Davis LE, MacDonald NC, Palmberg PW, Riach GE, Weber RE. In Handbook of Auger Electron Spectroscopy (2nd edn). Physical Electronics Industries: 1978; 71.