Structural and optical characteristics of pulsed laser deposited ZnSe epilayers

Applied Surface Science

Volumn 96-98, Issue , 1996, Pages 874-880

  Chergui, A ^a   Deiss, J L ^a   Grun, J B ^a   Loison, J L ^a   Robino, M ^a   Beserman, R ^b  

^a INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DEPOSITION; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SURFACE TREATMENT; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

PULSED LASER DEPOSITION; TARGET PURITY; ZINC-SELENIDE EPILAYERS;

THIN FILMS;

EID: 0030563043     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00579-X     Document Type: Article

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