Single-wafer Si and SiGe processes for advanced ULSI technologies

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 11-14

  Bodnar, S ^a   Morin, C ^a   Regolini, J L ^a  

^a ORANGE LABS   (France)

Author keywords

Epitaxy; Low temperature chemical vapour deposition; Selectivity; Silicon germanium

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

HETEROEPITAXIAL GROWTH;

SILICON WAFERS;

EID: 0031073603     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09235-8     Document Type: Article

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