Density anomaly effect upon silicon melt flow during Czochralski crystal growth I. Under the growth interface

Journal of Crystal Growth

Volumn 160, Issue 1-2, 1996, Pages 41-48

  Togawa, Shinji ^a   Chung, Sang Ik ^a   Kawanishi, Soroku ^a   Izunome, Koji ^a   Terashima, Kazutaka ^a,b   Kimura, Shigeyuki ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b Komatsu Electronic Metals Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DENSITY (SPECIFIC GRAVITY); FLOW OF FLUIDS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TEMPERATURE MEASUREMENT;

DENSITY ANOMALY EFFECT; FLOW STRUCTURE; GROWTH INTERFACE; RAYLEIGH-BENARD CONVECTION; SILICON MELT FLOW; SOFT TURBULENCE; TEMPERATURE FLUCTUATIONS;

CRYSTAL GROWTH FROM MELT;

EID: 0030110448     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00552-8     Document Type: Article

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