Electrodeposition of photoresist: Optimization of deposition conditions, investigation of lithographic processes and chemical resistance

Sensors and Actuators, A: Physical

Volumn 85, Issue 1, 2000, Pages 310-315

  Schnupp, R ^a   Baumgartner R ^b   Kuhnhold R ^b   Ryssel, H ^a,b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHEMICAL RESISTANCE; COMPOSITION EFFECTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTROCHEMICAL ELECTRODES; ELECTRODEPOSITION; ETCHING; OPTIMIZATION; SILICON WAFERS;

ELECTROCHEMICAL PHOTORESISTS;

PHOTORESISTS;

EID: 0342572520     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00344-7     Document Type: Article

References (5)

1. Linder S., Baltes H., Gnaedinger F., Doering E. Photolithography in anisotropically etched grooves. Proc. 9th IEEE Inter. MEMS Works. 1996;38-43.
2. Kersten P., Bouwstra S., Petersen J.W. Photolithography on micromachined 3D surfaces using electrodeposited photoresists. Sens. Actuators, A. 51:1995;51-54.
3. Christensen C., Kersten P., Henke S., Bouwstra S. Wafer through hole interconnections with high vertical wiring densities. IEEE Trans. Compon., Packag., Manuf. Technol., Part A. 19(4):1996;516-522.
4. Heschel M., Bouwstra S. Conformal coating by photoresist of sharp corners of anisotropically etched through-holes in silicon. Sens. Actuators, A. 70:1998;75-80.
5. R. Schnupp, Mikrorelais, German Patent 197 505 59, 1998, and International Patent Application WO 99/26264, 1998.