Properties of semi-insulating GaAs:Fe grown by hydride vapor phase epitaxy

Journal of the Electrochemical Society

Volumn 147, Issue 8, 2000, Pages 3109-3110

  Messmer Rodriguez E ^a   Soderstrom D ^a   Hult, P ^a   Marcinkevicius, S ^a   Lourdudoss, S ^a   Look, D C ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRON TRAPS; EMISSION SPECTROSCOPY; HOLE TRAPS; IRON; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

HOLE CAPTURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0342572482     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393865     Document Type: Article

References (6)

1. B.-S. Yoo, H. Y. Chu, H.-H. Park, H. G. Lee, and J. Lee, IEEE J. Quantum Electron., 33, 1794 (1997).
2. S. Lourdudoss, B. Hammarlund, and O. Kjebon, J. Electron. Mater., 19, 981 (1990).
3. Properties of Gallium Arsenide, 2nd ed., INSPEC, The Institution of Electrical Engineers, London and New York (1990).
4. D. C. Look and Z.-Q. Fang, J. Appl. Phys., 80, 3590 (1996).
5. D. V. Lang and R. A. Logan, J. Electron. Mater., 4, 1053 (1975).
6. M. Kleverman, P. Omling, L-Å. Ledebo, and H. G. Grimmeiss, J. Appl. Phys., 54, 814 (1983).