Optical study of good quality InGaP/GaAs quantum wells: Influence of the indium content around the lattice-matched composition

Applied Physics Letters

Volumn 68, Issue 15, 1996, Pages 2111-2113

  Martínez Pastor, Juan ^a   González, Luisa ^b   Roussignol, Philippe ^c  

^a UNIVERSITY OF VALENCIA   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^c 24 Rue Lhomond   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; ENERGY GAP; INDIUM; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; THERMAL EFFECTS;

ATOMIC LAYER MOLECULAR BEAM EPITAXY; CONDUCTION BAND OFFSET; INDIUM GALLIUM PHOSPHIDE; LUMINESCENCE INTENSITY; OPTICAL QUALITY; OSCILLATOR STRENGTH; PHOTOLUMINESCENCE EXCITATION; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030574975     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115601     Document Type: Article

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