Stress-profile characterization and test-structure analysis of single and double ion-implanted LPCVD polycrystalline silicon

Sensors and Actuators, A: Physical

Volumn 54, Issue 1-3, 1996, Pages 718-723

  Benitez M A ^a   Fonseca, L ^a   Esteve, J ^a   Benrakkad, M S ^b   Morante, J R ^b   Samitier, J ^b   Schweitz, J A ^c  

^a CSIC   (Spain)

^b EME   (Spain)

^c UPPSALA UNIVERSITY   (Sweden)

Author keywords

Polysilicon; Stress gradients; Surface micromachining

Indexed keywords

EID: 0012582834     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)80045-3     Document Type: Article

References (10)

1. V.P. Jaecklin, C. Linder and N.F. de Rooij, Novel polysilicon comb actuators for xy-stages, Micro Electro. Mech. Systems '92, Travemünde, Germany, 4-7 February, 1992, pp. 147-149.
2. W. Kuehnel and S. Sherman, A surface micromachined silicon accelerometer with on-chip detection circuitry, Sensors and Actuators A, 45 (1994) 7-16.
3. E. Cabruja and M. Schreiner, Deep trenches in silicon using photoresist as a mask, Sensors and Actuators A, 37-38 (1993) 766-771.
4. B.P. Van Drieënhuizen, J.F.L. Goosen, P.J. French and R.F. Wolffenbuttel, Comparison of techniques for measuring both compressive and tendile stress in thin films, Sensors and Actuators A, 37-38 (1993) 756-765.
5. F. Ericson, S. Greek, J. Södervist and J.A. Schweitz, High sensitive internal film stress measurement by an improved micromachined indicator structure, Tech. Digest, 8th Int. Conf. Solid-State Sensors and Actuators (Transducers '95) and Eurosensors IX, Stockholm, Sweden, 25-29 June, 1995, Vol. 2, pp. 84-85.
6. E. Martin, J. Jiménez, A. Pérez-Rodríguez and J.R. Morante, Raman characterization of SOI-Simox structures, Mater. Lett., 15 (1992) 122.
7. M.S. Benrakkad, A. Perez-Rodriguez, T. Jawhari, J. Samitier, J.M. Lopez-Villegas and J.R. Morante, Raman characterization of polycrystalline silicon: stress profile measurements, Mat. Res. Soc. Symp. Proc., 343 (1994) 609.
8. T. Englert, G. Abstreiter and J. Pontcharra, Determination of existing stress in silicon films on sapphire substrate using Raman-spectroscopy, Solid State Electrochem., 23 (1980) 31-33.
9. 2 interfaces studied by micro-Raman spectroscopy, J. Appl. Surf. Sci., 39 (1999) 116-126.
10. Lj. Ristic, R. Gutteridge, J. Kung, D. Koury, B. Dunn and H. Zunino, A capacitive type accelerometer with self-test feature based on a double-pinned polysilicon structure, Proc. 7th Int. Conf. Solid-State Sensors and Actuators (Transducers '93), Yokohama, Japan, 7-10 June, 1993, pp. 811-814.