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Volumn , Issue , 2003, Pages 631-634

An ultra-low-power, radiation-tolerant reed solomon encoder for space applications

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER ARCHITECTURE; SPACE APPLICATIONS; THRESHOLD VOLTAGE;

EID: 0242696031     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (7)
  • 2
    • 0242677030 scopus 로고    scopus 로고
    • J. Rabaey and M. Pedram (editors); Kluwer Academic Publishers
    • J. Rabaey and M. Pedram (editors), Low Power Design Methodologies, Kluwer Academic Publishers, 1996, p. 25.
    • (1996) Low Power Design Methodologies , pp. 25
  • 4
    • 0032095217 scopus 로고    scopus 로고
    • Total does hardness of three commercial CMOS microelectronics foundries
    • June
    • J. Osborn, R. Lacoe, D. Mayer, and G. Yabiku, "Total Does Hardness of Three Commercial CMOS Microelectronics Foundries", IEEE Transactions On Nuclear Science, Vol. 45, No. 3, June 1998, pp. 1458-1463.
    • (1998) IEEE Transactions on Nuclear Science , vol.45 , Issue.3 , pp. 1458-1463
    • Osborn, J.1    Lacoe, R.2    Mayer, D.3    Yabiku, G.4
  • 5
    • 0242593210 scopus 로고
    • Mechanism for preventing radiation induced latchup in CMOS integrated circuits
    • U.S. Patent 5,406,513, Apr. 11
    • J. Canaris, S. Whitaker, and K. Cameron, "Mechanism for Preventing Radiation Induced Latchup in CMOS Integrated Circuits", U.S. Patent 5,406,513, Apr. 11, 1995.
    • (1995)
    • Canaris, J.1    Whitaker, S.2    Cameron, K.3
  • 6
    • 0033342041 scopus 로고    scopus 로고
    • Enhanced total ionizing dose tolerance of bulk CMOS transistors fabricated for ultra-low power applications
    • Dec.
    • M.A. Xapsos, G.P. Summers, and E.M. Jackson. "Enhanced Total Ionizing Dose Tolerance of Bulk CMOS Transistors Fabricated for Ultra-Low Power Applications", IEEE Transactions On Nuclear Science, Vol. 46, No. 6, Dec. 1999, pp. 1697-1701.
    • (1999) IEEE Transactions on Nuclear Science , vol.46 , Issue.6 , pp. 1697-1701
    • Xapsos, M.A.1    Summers, G.P.2    Jackson, E.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.