High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 289-292

  Seitz, C ^a   Rempel, A A ^a,b,c   Magerl, A ^a   Gomm, M ^a   Sprengel, W ^b   Schaefer, H E ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c INSTITUTE OF SOLID STATE CHEMISTRY   (Russian Federation)

Author keywords

Electron Irradiation; Lattice Constants; Positron Annihilation; X Ray Diffraction

Indexed keywords

ANNEALING; ELECTRON IRRADIATION; LATTICE CONSTANTS; POSITRON ANNIHILATION SPECTROSCOPY; SINGLE CRYSTALS; X RAY DIFFRACTION;

SILICON SUBLATTICES;

SILICON CARBIDE;

EID: 0242665442     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.289     Document Type: Conference Paper

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