Electron microscopy study of SiC obtained by the carbonization of Si(111)

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 305-308

  Pacheco, F J ^a   Sanchez A M ^a   Molina, S I ^a   Araujo D ^a   Devrajan, J ^b   Steckl, A J ^b   Garcia R ^a  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSITY OF CINCINNATI   (United States)

Author keywords

Electron microscopy; Si(111); Silicon carbide

Indexed keywords

CARBONIZATION; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); FILM GROWTH; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS; STRESSES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

MOSAIC STRUCTURE;

SEMICONDUCTING FILMS;

EID: 0242580459     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01589-2     Document Type: Article

References (5)

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4. R.W.G. Wyckoff, Crystal Structures, Interseience, New York, Vol. 1, 1963, p. 111.
5. J.P. Li, A.J. Steckl, I. Golecki, F. Reidinger, L. Wang, X.J. Ning, P. Pirouz, Appl. Phys. Lett. 62 (1993) 3135.