Enhanced adhesion and performance of the source/drain electrode using a single-layered Ag(Cu) film for an amorphous silicon thin-film transistor

Applied Physics Letters

Volumn 83, Issue 16, 2003, Pages 3419-3421

  Hong, S J ^a   Lee, S ^a   Park, J B ^a   Yang, H J ^a   Ko, Y K ^a   Lee, J G ^a   Cho, B S ^b   Jeong, C O ^b   Chung, K H ^b  

^a Kookmin University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; AMORPHOUS SILICON; ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTROCHEMICAL ELECTRODES; LIQUID CRYSTAL DISPLAYS; SILVER ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

SPUTTERING CHAMBERS;

THIN FILM TRANSISTORS;

EID: 0242496377     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1621074     Document Type: Article

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