Vapor-phase stoichiometry and heat treatment of CdTe starting material for physical vapor transport

Journal of Crystal Growth

Volumn 183, Issue 4, 1998, Pages 519-524

  Su, Ching Hua ^a   Sha, Yi Gao ^a,c   Lehoczky, S L ^a   Liu, Hao Chieh ^b   Fang, Rei ^b   Brebrick, R F ^b  

^a NASA MARSHALL SPACE FLIGHT CENTER   (United States)

^b MARQUETTE UNIVERSITY   (United States)

^c Digirad Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; LIGHT ABSORPTION; PRESSURE MEASUREMENT; STOICHIOMETRY; SUBLIMATION; SYNTHESIS (CHEMICAL);

VAPOR PHASE STOICHIOMETRY;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0032002765     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)80001-8     Document Type: Article

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