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Journal of Applied Physics

Volumn 92, Issue 8, 2002, Pages 4312-4319

Hot photoluminescence in GaN: Carrier energy relaxation and hot phonon effects

(1) Duboz, Jean Yves a,b

a THALES RESEARCH AND TECHNOLOGY (France)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTUAL TEMPERATURE; ANISOTROPIC MODELS; CARRIER ENERGY RELAXATION; CARRIER SCATTERING; CARRIER-CARRIER SCATTERING; DISCRETE DISTRIBUTION; ELECTRON AND HOLE ENERGIES; ENERGETIC ELECTRON; EXPERIMENTAL DATA; HOLE GAS; HOLE TEMPERATURE; HOT PHONONS; HOT PHOTOLUMINESCENCE; HOT-PHONON EFFECTS; LATTICE TEMPERATURES; LO PHONONS; LONGITUDINAL OPTICAL PHONONS; OPTICAL PHONONS; PHONON MODE; PHOTOLUMINESCENCE TEMPERATURE; THEORETICAL STUDY; WURTZITES; WURZITE;

ELECTRON SCATTERING; GALLIUM NITRIDE; PHONONS; PHOTOLUMINESCENCE; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 18744374580 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1499525 Document Type: Article

Times cited : (9)

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