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Volumn 94, Issue 9, 2003, Pages 5549-5555
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Positron-electron autocorrelation function study of E-center in silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
BINDING ENERGY;
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
ELECTRON IRRADIATION;
FOURIER TRANSFORMS;
POSITRON ANNIHILATION SPECTROSCOPY;
SATURATION (MATERIALS COMPOSITION);
DEFECT POINTS;
ELECTRON ORBITALS;
SILICON;
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EID: 0242413066
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1613368 Document Type: Article |
Times cited : (5)
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References (18)
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