Silicon Films Deposited by Low-Pressure Chemical Vapour Deposition for Microsystems

Solid State Phenomena

Volumn 93, Issue , 2003, Pages 453-458

  Mahfoz Kotb, H ^a   Salaun A C ^a   Mohammed Brahim, T ^a   Bendriaa, F ^a   Le Bihan, F ^a   Bonnaud, O ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Polycrystalline Silicon; Residual Stress; Suspended Gate Thin Film Transistor

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); POLYSILICON; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; THIN FILM TRANSISTORS; THIN FILMS;

SILICON FILMS;

SEMICONDUCTING FILMS;

EID: 0242412961     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.93.453     Document Type: Conference Paper

References (5)

1. H.C.Nathanson and R.A. Wickstrom, Applied Physics Letters, 7, 84 (1965).
2. K. Kasten, J. Amelung and W. Mokwa, Sensors and Actuators A, 85, 147 (2000).
3. Y. Helen, R. Dassow, M. Nerding, K. Mourgues, F. Raoult, J.R. Köhler, T. Mohammed-Brahim, R. Rogel, O. Bonnaud and J. H. Werner, Thin Solid Films, 383, 143 (2001).
4. V.Paillard, P.Puech, M.A.Laguna, P.Temple-Boyer, B.Caussat, J.P.Couderc and B.Maudit. Appl. Phys. Letters 73 (12) 1718 (1998).
5. M.S.Bennrakkad, M.A.Benitez, J.Esteve, J.M.Lopez-Villegas, J.Samitier and J.R.Morante. J.Micromech. Microeng. 5, 132-135 (1995).