Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing

Optical Materials

Volumn 17, Issue 1-2, 2001, Pages 99-102

  Tyschenko, I E ^a   Zhuravlev, K S ^a   Vandyshev, E N ^a   Misiuk, A ^b   Rebohle, L ^c   Skorupa, W ^c   Yankov, R A ^d   Popov, V P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d CCR GmbH   (Germany)

Author keywords

Ion implantation; Pressure; Silicon oxynitride; The photoluminescence

Indexed keywords

ANNEALING; HYDROSTATIC PRESSING; ION IMPLANTATION; PHOTOLUMINESCENCE; POROUS SILICON; POSITIVE IONS; SEMICONDUCTING GERMANIUM;

RADIATIVE RECOMBINATION CENTERS; SILICON OXYNITRIDE;

OPTICAL FILMS;

EID: 0035361413     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00028-3     Document Type: Conference Paper

References (4)