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Volumn 36, Issue 20, 2003, Pages 2515-2520
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The statistical time-delay and the breakdown formative time contributions to the memory effect in Ne at 7 mbar pressure
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC BREAKDOWN;
ELECTRODES;
ELECTRONS;
MATHEMATICAL MODELS;
PRESSURE EFFECTS;
RELAXATION PROCESSES;
STATISTICAL METHODS;
BREAKDOWN FORMATIVE;
MEMORY EFFECT;
NEON FILLED DIODE;
STATISTICAL TIME-DELAY;
NEON;
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EID: 0242336750
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/36/20/013 Document Type: Article |
Times cited : (22)
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References (30)
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