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Volumn 18, Issue 1, 2003, Pages 16-31

The benefits of dynamic reaction cell ICP-MS technology to determine ultratrace metal contamination levels in high-purity phosphoric and sulfuric acid

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC REACTION CELLS (DRC); GAS FLOW; QUADROUPOLE; SEMICONDUCTOR INDUSTRY;

EID: 0242327620     PISSN: 08876703     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review
Times cited : (14)

References (13)
  • 2
    • 84876490372 scopus 로고    scopus 로고
    • Semi-conductor Equipment and Materials International, San Jose, CA
    • Book of SEMI Standards (BOSS) (Semi-conductor Equipment and Materials International, San Jose, CA (2001).
    • (2001) Book of SEMI Standards (BOSS)
  • 3
    • 85030799096 scopus 로고    scopus 로고
    • SEMI C36-0301, Semiconductor Equipment and Materials International, San Jose, CA
    • SEMI C36-0301, "Specifications for Grade 3 Phosphoric Acid" (Semiconductor Equipment and Materials International, San Jose, CA (2001).
    • (2001) Specifications for Grade 3 Phosphoric Acid
  • 5
    • 84876459420 scopus 로고    scopus 로고
    • SEMI C44-0301, Semiconductor Equipment and Materials International, San Jose, CA
    • SEMI C44-0301, "Specifications and Guidelines for Sulfuric Acid" (Semiconductor Equipment and Materials International, San Jose, CA (2001).
    • (2001) Specifications and Guidelines for Sulfuric Acid
  • 11
    • 84876503115 scopus 로고    scopus 로고
    • Covered by United States Patent Number 6140638
    • Covered by United States Patent Number 6140638.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.