Te vapor pressure dependence of the pn junction properties of PbTe liquid phase epitaxial layers

Journal of Electronic Materials

Volumn 27, Issue 5, 1998, Pages 438-441

  Nugraha, ^a   Tamura, Wataru ^b   Itoh, Osamu ^c   Suto, Ken ^b   Nishizawa, Junichi ^c  

^a BANDUNG INSTITUTE OF TECHNOLOGY   (Indonesia)

^b TOHOKU UNIVERSITY   (Japan)

^c SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

Liquid phase epitaxy; p n junctions; PbTe

Indexed keywords

EID: 0242279083     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0174-4     Document Type: Article

References (11)

1. E.D. Hinkley, Opto-Electr. 4, 69 (1972).
2. M. Mumma, T. Kostiuk, S. Cohen, D. Bubl and P.C von Thuna, Nature 253, 514 (1975).
3. Z. Feite, D. Kostyk, R.J. Woods and P. Mak, Appl. Phys. Lett. 58 (4), 28 (1991).
4. Nugraha, K. Suto, O. Itoh, J. Nishizawa and Y. Yokota, J. Cryst. Growth 165, 402 (1996).
5. J. Nishizawa, S. Shinozaki and K. Ishida, J. Appl. Phys. 44, 1683 (1973).
6. J. Nishizawa and Y. Okuno, IEEE Trans. ED-22, 716 (1975).
7. J. Nishizawa, Y. Okuno and K. Suto, JARECT 19 Semiconductor Technology, ed. J. Nishizawa (Tokyo: OHM and North-Holland, 1986).
8. Nugraha, O. Itoh, K. Suto and J. Nishizawa, J. Cryst. Growth 163, 353 (1996).
9. B. Schlicht, R. Dornhaus, G. Nimitz, L.D. Haas and T. Jakobus, Solid State Electron. 21, 1481 (1978).
10. J. Nishizawa, Y. Okuno and H. Tadano, J. Cryst. Growth 31, 215 (1975).
11. M.K. Norr, J.Electrochem. Soc. 109, 433 (1962).