Growth and electrical properties of PbTe bulk crystals grown by the Bridgman method under controlled tellurium or lead vapor pressure

Journal of Crystal Growth

Volumn 165, Issue 4, 1996, Pages 402-407

  Nugraha, ^a   Suto, Ken ^a   Itoh, Osamu ^b   Nishizawa, Jun Ichi ^a,b   Yokota, Yasutoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC PROPERTIES; SEMICONDUCTING LEAD COMPOUNDS; TELLURIUM; VAPOR PRESSURE;

BRIDGMAN METHOD; ETCH PIT DENSITIES; LEAD TELLURIUM;

CRYSTAL GROWTH;

EID: 0030564756     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00220-5     Document Type: Article

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