SCOPUS 정보 검색 플랫폼

Volumn 163, Issue 4, 1996, Pages 353-358

Growth and electrical properties of PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure liquid phase epitaxy

(4) Nugraha, a Itoh, Osamu b Suto, Ken a Nishizawa, Jun Ichi a,b

a TOHOKU UNIVERSITY (Japan)

b SEMICONDUCTOR RESEARCH INSTITUTE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; LEAD; LIQUID PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING LEAD COMPOUNDS; SOLVENTS; TELLURIUM; TEMPERATURE MEASUREMENT; VAPOR PRESSURE;

CONTROLLED VAPOR PRESSURE; GROWTH TEMPERATURE; GROWTH THICKNESS; GROWTH TIME; LEAD TELLURIDE EPITAXIAL LAYER; SUBSIDIARY HEATER POWER; TEMPERATURE DIFFERENCE METHOD;

SEMICONDUCTING FILMS;

EID: 0030564241 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00992-2 Document Type: Article

Times cited : (11)

References (15)

1
- 3843080599
- J. Nishizawa, S. Shinozaki and K. Ishida, J. Appl. Phys. 44 (1973) 1683.
- (1973) J. Appl. Phys. , vol.44 , pp. 1683
- Nishizawa, J.¹ Shinozaki, S.² Ishida, K.³

2
- 0016550057
- J. Nishizawa and Y. Okuno, IEEE Trans. ED-22 (1975) 716.
- (1975) IEEE Trans. ED-22 , pp. 716
- Nishizawa, J.¹ Okuno, Y.²

3
- 30244563319
- Ed. M.A. Herman PWN-Polish, Warsawa
- J. Nishizawa and Y. Okuno, in: Semiconductor Optoelectronics, Ed. M.A. Herman (PWN-Polish, Warsawa, 1980) p. 111.
- (1980) Semiconductor Optoelectronics , pp. 111
- Nishizawa, J.¹ Okuno, Y.²

4
- 0347335997
- Ed. J. Nishizawa OHM and North-Holland, Tokyo
- J. Nishizawa, Y. Okuno and K. Suto, in: JARECT 19 Semiconductor Technology, Ed. J. Nishizawa (OHM and North-Holland, Tokyo, 1986).
- (1986) JARECT 19 Semiconductor Technology
- Nishizawa, J.¹ Okuno, Y.² Suto, K.³

5
- 0001052801
- J. Nishizawa, K. Itoh, Y. Okuno and F. Sakurai, J. Appl. Phys. 57 (1985) 2210.
- (1985) J. Appl. Phys. , vol.57 , pp. 2210
- Nishizawa, J.¹ Itoh, K.² Okuno, Y.³ Sakurai, F.⁴

6
- 0026413218
- F. Sakurai, H. Fujishiro, K. Suto and J. Nishizawa, J. Crystal Growth 112 (1991) 153.
- (1991) J. Crystal Growth , vol.112 , pp. 153
- Sakurai, F.¹ Fujishiro, H.² Suto, K.³ Nishizawa, J.⁴

7
- 85029992938
- in press
- Nugraha, K. Suto, O. Itoh, J. Nishizawa and Y. Yokota, J. Crystal Growth, in press.
- J. Crystal Growth
- Nugraha¹ Suto, K.² Itoh, O.³ Nishizawa, J.⁴ Yokota, Y.⁵

8
- 0000786266
- M.K. Norr, J. Electrochem. Soc. 109 (1962) 433.
- (1962) J. Electrochem. Soc. , vol.109 , pp. 433
- Norr, M.K.¹

9
- 84897495251
- N.V. Korneyeva, A.S. Pashenkin, A.V. Novoselova and Yu.A. Priselkov, Zh. Neogr. Khim. 2 (1958) 1720.
- (1958) Zh. Neogr. Khim. , vol.2 , pp. 1720
- Korneyeva, N.V.¹ Pashenkin, A.S.² Novoselova, A.V.³ Priselkov, Yu.A.⁴

10
- 3743067959
- J. Nishizawa, Y. Kobayashi and Y. Okuno, Jpn. J. Appl. Phys. 19 (1980) 345.
- (1980) Jpn. J. Appl. Phys. , vol.19 , pp. 345
- Nishizawa, J.¹ Kobayashi, Y.² Okuno, Y.³

11
- 3743080583
- J. Nishizawa, J. Jpn. Assoc. Cryst. Growth 5 (1978) 211.
- (1978) J. Jpn. Assoc. Cryst. Growth , vol.5 , pp. 211
- Nishizawa, J.¹

12
- 0010353253
- S.I. Long, J.M. Ballantyne and L.F. Eastman, J. Crystal Growth 26 (1974) 13.
- (1974) J. Crystal Growth , vol.26 , pp. 13
- Long, S.I.¹ Ballantyne, J.M.² Eastman, L.F.³

13
- 0037559058
- J.C. Lin, K.C. Hsieh, R.C. Sharma and Y.A. Chang, Bull. Alloy Phase Diagrams 10 (1989) 340.
- (1989) Bull. Alloy Phase Diagrams , vol.10 , pp. 340
- Lin, J.C.¹ Hsieh, K.C.² Sharma, R.C.³ Chang, Y.A.⁴

14
- 0343209386
- Y. Sato, M. Fujimoto and A. Kobayashi, Jpn. J. Appl. Phys. 11 (1963) 688.
- (1963) Jpn. J. Appl. Phys. , vol.11 , pp. 688
- Sato, Y.¹ Fujimoto, M.² Kobayashi, A.³

15
- 1642583815
- J. Nishizawa, Y. Oyama and K. Dezaki, J. Appl. Phys. 64 (1990) 1884.
- (1990) J. Appl. Phys. , vol.64 , pp. 1884
- Nishizawa, J.¹ Oyama, Y.² Dezaki, K.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.