Electronic sputtering from HOPG: A study of angular dependence

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 212, Issue 1-4, 2003, Pages 402-406

  Tripathi, A ^a,g   Khan, S A ^a   Srivastava, S K ^a   Kumar, M ^b   Kumar, S ^c   Rao, S V S N ^d   Lakshmi, G B V S ^d   Siddiqui, Azhar M ^a   Bajwa, N ^e   Nagaraja, H S ^a   Mittal, V K ^f   Szokefalvi, A ^g   Kurth, M ^g   Pandey, A C ^b   Avasthi, D K ^a   Carstanjen, H D ^g  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^b UNIVERSITY OF ALLAHABAD   (India)

^c R B S COLLEGE   (India)

^d UNIVERSITY OF HYDERABAD   (India)

^e PANJAB UNIVERSITY   (India)

^f PUNJABI UNIVERSITY   (India)

^g MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Angular distribution; Electronic sputtering; ERDA; HOPG; Swift heavy ions

Indexed keywords

ANISOTROPY; CARBON; CRYSTAL STRUCTURE; GRAPHITE; HEAVY IONS; SILICON; SILVER; SPUTTERING;

ANGULAR DEPENDENCE;

ION BEAMS;

EID: 0242274298     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01742-7     Document Type: Conference Paper

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