-
1
-
-
0242378054
-
Self-aligned Si BJT/SiGe HBT technology and its application to high-speed circuits
-
World Scientific, March
-
K. Washio, "Self-aligned Si BJT/SiGe HBT technology and its application to high-speed circuits", International Journal of High Speed Electronics and Systems, vol.11, no.l, World Scientific, pp.77-114, March 2001.
-
(2001)
International Journal of High Speed Electronics and Systems
, vol.11
, Issue.1
, pp. 77-114
-
-
Washio, K.1
-
2
-
-
0035506260
-
A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure
-
November
-
S.J. Jeng, B. Jagannathan, J.-S. Rieh, J. Johnson, K.T. Schonenberg, D. Greenberg, A. Stricker, H. Chen, M. Khater, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna, "A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure", IEEE Electron Device Letters, vol.22, no.11, pp. 542-4 November 2001
-
(2001)
IEEE Electron Device Letters
, vol.22
, Issue.11
, pp. 542-544
-
-
Jeng, S.J.1
Jagannathan, B.2
Rieh, J.-S.3
Johnson, J.4
Schonenberg, K.T.5
Greenberg, D.6
Stricker, A.7
Chen, H.8
Khater, M.9
Ahlgren, D.10
Freeman, G.11
Stein, K.12
Subbanna, S.13
-
3
-
-
0001337925
-
Comparison of Be and C diffusion in heavily doped polycrystalline GaAs
-
17 Oct.
-
K. Mochizuki, T. Nakamura, "Comparison of Be and C diffusion in heavily doped polycrystalline GaAs", Applied Physics Letters, vol.65, no.16, pp.2066-8, 17 Oct. 1994.
-
(1994)
Applied Physics Letters
, vol.65
, Issue.16
, pp. 2066-2068
-
-
Mochizuki, K.1
Nakamura, T.2
-
4
-
-
0032096792
-
4
-
June
-
4", Journal of Crystal Growth, vol.188, no.1-4, pp.45-9, June 1998.
-
(1998)
Journal of Crystal Growth
, vol.188
, Issue.1-4
, pp. 45-49
-
-
Li, N.Y.1
Tu, C.W.2
-
5
-
-
0032203870
-
2
-
Nov.
-
2", IEEE Transactions on Electron Devices, vol.45, no.11, pp. 2276-82, Nov. 1998.
-
(1998)
IEEE Transactions on Electron Devices
, vol.45
, Issue.11
, pp. 2276-2282
-
-
Oka, T.1
Hirata, K.2
Ouchi, K.3
Uchiyama, H.4
Mochizuki, K.5
Nakamura, T.6
-
6
-
-
84948656056
-
InAlAs/InGaAs/InP DHBTs with Polycrystalline InAs Extrinsic Emitter Regrowth
-
D. Scott, H. Xing, S. Krishnan, M. Urteaga, N. Parthasarathy, M. Rodwell, "InAlAs/InGaAs/InP DHBTs with Polycrystalline InAs Extrinsic Emitter Regrowth", 2002 Device Research Conference Conference Digest, pp. 171-2.
-
(2002)
2002 Device Research Conference Conference Digest
, pp. 171-172
-
-
Scott, D.1
Xing, H.2
Krishnan, S.3
Urteaga, M.4
Parthasarathy, N.5
Rodwell, M.6
-
7
-
-
3142583802
-
0.4As for high resistances in heterojunction bipolar transistor integrated circuits
-
19 June
-
0.4As for high resistances in heterojunction bipolar transistor integrated circuits", Electronics Letters, vol.33, no.13, p. 1181, 19 June 1997.
-
(1997)
Electronics Letters
, vol.33
, Issue.13
, pp. 1181
-
-
Mochizuki, K.1
Oka, T.2
Nakamura, T.3
-
8
-
-
51249164510
-
Molecular beam deposition of low-resistance polycrystalline GaAs
-
June
-
K. Mochizuki, T. Nakamura, T. Mishima, H. Masuda, T. Tanoue, T. "Molecular beam deposition of low-resistance polycrystalline GaAs", Journal of Electronic Materials, vol.23, no.6, pp.577-80, June 1994.
-
(1994)
Journal of Electronic Materials
, vol.23
, Issue.6
, pp. 577-580
-
-
Mochizuki, K.1
Nakamura, T.2
Mishima, T.3
Masuda, H.4
Tanoue, T.5
|