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Volumn , Issue , 2002, Pages 207-212

Molecular Beam Deposition of Low-Resistance Polycrystalline InAs

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC RESISTANCE; ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TITANIUM;

EID: 0242270764     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (8)
  • 1
    • 0242378054 scopus 로고    scopus 로고
    • Self-aligned Si BJT/SiGe HBT technology and its application to high-speed circuits
    • World Scientific, March
    • K. Washio, "Self-aligned Si BJT/SiGe HBT technology and its application to high-speed circuits", International Journal of High Speed Electronics and Systems, vol.11, no.l, World Scientific, pp.77-114, March 2001.
    • (2001) International Journal of High Speed Electronics and Systems , vol.11 , Issue.1 , pp. 77-114
    • Washio, K.1
  • 3
    • 0001337925 scopus 로고
    • Comparison of Be and C diffusion in heavily doped polycrystalline GaAs
    • 17 Oct.
    • K. Mochizuki, T. Nakamura, "Comparison of Be and C diffusion in heavily doped polycrystalline GaAs", Applied Physics Letters, vol.65, no.16, pp.2066-8, 17 Oct. 1994.
    • (1994) Applied Physics Letters , vol.65 , Issue.16 , pp. 2066-2068
    • Mochizuki, K.1    Nakamura, T.2
  • 7
    • 3142583802 scopus 로고    scopus 로고
    • 0.4As for high resistances in heterojunction bipolar transistor integrated circuits
    • 19 June
    • 0.4As for high resistances in heterojunction bipolar transistor integrated circuits", Electronics Letters, vol.33, no.13, p. 1181, 19 June 1997.
    • (1997) Electronics Letters , vol.33 , Issue.13 , pp. 1181
    • Mochizuki, K.1    Oka, T.2    Nakamura, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.