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Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 45-49

Low-resistance polycrystalline GaAs grown by gas-source molecular beam epitaxy using CBr4

(2) Li, N Y a,b Tu, C W b

a UNIVERSITY OF NEW MEXICO (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Carbon doping; CBE; CBr4; Polycrystalline GaAs

Indexed keywords

BIPOLAR TRANSISTORS; BROMINE COMPOUNDS; CARBON; CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN SIZE AND SHAPE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

CARBON TETRABROMIDE; GAS SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032096792 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00086-4 Document Type: Article

Times cited : (4)

References (16)

1
- 0018468226
- T.I. Kamins, J. Electrochem. Soc. 126 (1979) 833.
- (1979) J. Electrochem. Soc. , vol.126 , pp. 833
- Kamins, T.I.¹

2
- 0020126775
- A. Baudrant, M. Sacilotti, J. Electrochem. Soc. 129 (1982) 1109.
- (1982) J. Electrochem. Soc. , vol.129 , pp. 1109
- Baudrant, A.¹ Sacilotti, M.²

3
- 0003679027
- ch. 6, McGraw-Hill, New York
- S.M. Sze, VLSI Technology, 2nd ed., ch. 6, McGraw-Hill, New York, 1988.
- (1988) VLSI Technology, 2nd Ed.
- Sze, S.M.¹

4
- 0020116089
- T. Nakamura, T. Miyazaki, S. Takahasji, T. Kure, T. Okabe, M. Nagata, IEEE Trans. Electron Devices ED-29 (1982) 596.
- (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 596
- Nakamura, T.¹ Miyazaki, T.² Takahasji, S.³ Kure, T.⁴ Okabe, T.⁵ Nagata, M.⁶

5
- 0003748504
- ch. 5, Wiley, New York
- S.M. Sze, High-speed Semiconductor Devices, ch. 5, Wiley, New York, 1990.
- (1990) High-speed Semiconductor Devices
- Sze, S.M.¹

6
- 0016943661
- W.C. Ballamy, A.Y. Cho, IEEE Trans. Electron Devices ED-23 (1976) 481.
- (1976) IEEE Trans. Electron Devices , vol.ED-23 , pp. 481
- Ballamy, W.C.¹ Cho, A.Y.²

7
- 0346970308
- T.P. Lee, A.Y. Cho, Appl. Phys. Lett. 29 (1976) 164.
- (1976) Appl. Phys. Lett. , vol.29 , pp. 164
- Lee, T.P.¹ Cho, A.Y.²

8
- 0019035523
- S. Hiyamizu, K. Nanbu, T. Fujii, T. Sakurai, H. Hashimoto, O. Ryuzan, J. Electrochem. Soc. 127 (1980) 1562.
- (1980) J. Electrochem. Soc. , vol.127 , pp. 1562
- Hiyamizu, S.¹ Nanbu, K.² Fujii, T.³ Sakurai, T.⁴ Hashimoto, H.⁵ Ryuzan, O.⁶

9
- 0346970306
- M.C. Ho, T.P. Chin, C.W. Tu, P.M. Asbeck, J. Appl. Phys. 74 (1993) 2128.
- (1993) J. Appl. Phys. , vol.74 , pp. 2128
- Ho, M.C.¹ Chin, T.P.² Tu, C.W.³ Asbeck, P.M.⁴

10
- 0032099239
- Y.M. Hsin, N.Y. Li, C.W. Tu, P.M. Asbeck, J. Crystal Growth 188 (1998) 355.
- (1998) J. Crystal Growth , vol.188 , pp. 355
- Hsin, Y.M.¹ Li, N.Y.² Tu, C.W.³ Asbeck, P.M.⁴

11
- 0029377284
- K. Mochizuki, T. Nakamura, T. Tanoue, H. Masuda, Solid-State Electron. 9 (1995) 1619.
- (1995) Solid-State Electron. , vol.9 , pp. 1619
- Mochizuki, K.¹ Nakamura, T.² Tanoue, T.³ Masuda, H.⁴

12
- 0019036617
- J.J.J. Yang, P.D. Dapkus, R.D. Dupuis, R.D. Yingling, J. Appl. Phys. 51 (1980) 3794.
- (1980) J. Appl. Phys. , vol.51 , pp. 3794
- Yang, J.J.J.¹ Dapkus, P.D.² Dupuis, R.D.³ Yingling, R.D.⁴

13
- 51249164510
- K. Mochizuki, T. Nakamura, T. Mishima, H. Masuka, T. Tanoue, J. Electron. Mater. 23 (1994) 577.
- (1994) J. Electron. Mater. , vol.23 , pp. 577
- Mochizuki, K.¹ Nakamura, T.² Mishima, T.³ Masuka, H.⁴ Tanoue, T.⁵

14
- 0001337925
- K. Mochizuki, T. Nakamura, Appl. Phys. Lett. 65 (1994) 2066.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2066
- Mochizuki, K.¹ Nakamura, T.²

15
- 21544465584
- B.T. Cunningham, L.J. Guido, J.E. Baker, J.S. Major, J.N. Holonyak, G.E. Stillman, Appl. Phys. Lett. 55 (1989) 687.
- (1989) Appl. Phys. Lett. , vol.55 , pp. 687
- Cunningham, B.T.¹ Guido, L.J.² Baker, J.E.³ Major, J.S.⁴ Holonyak, J.N.⁵ Stillman, G.E.⁶

16
- 0029304455
- N.Y. Li, Y.M. Hsin, H.K. Dong, T. Nakamura, P.M. Asbeck, C.W. Tu, J. Crystal Growth 150 (1995) 562.
- (1995) J. Crystal Growth , vol.150 , pp. 562
- Li, N.Y.¹ Hsin, Y.M.² Dong, H.K.³ Nakamura, T.⁴ Asbeck, P.M.⁵ Tu, C.W.⁶

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